note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: ft0029b doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet smd1, 2 note 1 / maximum current limited by package configuration SFF23N60S1 sff23n60s2 21 amp, 600 volts, 320 m ? avalanche rated n-channel mosfet features: ? rugged poly-si gate ? lowest on-resistance in the industry ? avalanche rated ? hermetically sealed, hot case power smd ? low total gate charge ? fast switching ? tx, txv, s-level screening available ? improved (r ds(on) q g ) figure of merit maximum ratings symbol value units drain - source voltage v dss 600 v gate ? source voltage continuous transient v gs 30 40 v max. continuous drain current (package limited) @ t c = 25oc @ t c = 125oc i d1 i d2 21 10 a pulsed drain (instantaneous) current (tj limited) @ t c = 25oc i d3 30 a max. avalanche current @ l= 0.1 mh i ar 30 a single / repetitive avalanche energy @ l= 0.1 mh e as / e ar 1500 / 30 mj total power dissipation @ t c = 25oc p d 300 w operating & storage temperature t op & t stg -55 to +150 oc maximum thermal resistance junction to case r 0 jc 0.42 (typ 0.3) oc/w smd 1 smd 2
note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: ft0029b doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF23N60S1 sff23n60s2 electrical characteristics 4 / symbol min typ max units drain to source breakdown voltage v gs = 0v, i d = 250 a bv dss 600 620 ?? v drain to source on state resistance v gs = 10v, i d = 11.5a, tj= 25 o c v gs = 10v, i d = 25a, tj=25 o c v gs =10v, i d = 11.5a, tj= 125 o c r ds(on) ?? ?? ?? 300 300 670 320 ?? ?? m ? gate threshold voltage v ds = v gs , i d = 4ma, tj= 25 o c v ds = v gs , i d = 1ma, tj= 25 o c v gs(th) 2.0 ?? 3.5 3.4 4.5 ?? v gate to source leakage v gs = 30v, tj= 25 o c v gs = 20v, tj= 125 o c i gss ?? ?? 20 30 100 ?? na zero gate voltage drain current v ds = 600v, v gs = 0v, t j = 25 o c v ds = 480v, v gs = 0v, t j = 125 o c i dss ?? ?? 0.1 0.085 25 1 a ma forward transconductance v ds = 10v, i d = 11.5a, t j = 25 o c g fs 10 20 ?? mho total gate charge gate to source charge gate to drain charge v gs = 10v v ds = 300v i d = 16.5a q g q gs q gd ?? ?? ?? 100 23 45 ?? ?? ?? nc turn on delay time rise time turn off delay time fall time v gs = 10v v ds = 300v i d = 16.5a r g = 2.0 ? , pw= 3us t d(on) t r t d(off) t f ?? ?? ?? ?? 28 33 80 23 ?? ?? ?? ?? nsec diode forward voltage i f = 23a, v gs = 0v i f = 16.5a, v gs = 0v v sd ?? ?? 1.0 0.87 1.5 ?? v diode reverse recovery time peak reverse recovery current reverse recovery charge i f = 16.5a, di/dt = 100a/usec t rr i rm(rec) q rr ?? ?? ?? 210 tbd 1.3 250 ?? ?? nsec a c input capacitance output capacitance reverse transfer capacitance v gs = 0v v ds = 25v f = 1 mhz c iss c oss c rss ?? ?? ?? 4100 400 120 ?? ?? ?? pf notes: * pulse test: pulse width = 300sec, duty cycle = 2%. 1 / for ordering information, price, and availability contact factory. 2 / screening per mil-prf-19500. 3 / for package outlines contact factory. 4 / unless otherwise specified, all electrical characteristics @25 o c. available part numbers: consult factory pin assignment (standard) package drain source gate smd1 pin 1 pin 2 pin 3 smd2 pin 1 pin 2 pin 3
|
